This is a graduate-level deep dive into how modern transistors actually work at the device-physics level, starting from carrier transport in semiconductors and ending at the regime where classical models break down and quantum effects (tunneling, ballistic transport, 2D materials like graphene) take over. You'll spend the semester deriving operating equations and figures of merit for the full device zoo — p-n and Schottky junctions, MOSCAPs, BJTs, MOSFETs, nanowire FETs, HEMTs, RTDs — through regular quizzes, two midterms, and a final, working out of Sze. It assumes you've already had an undergraduate solid-state/devices course, and it's the foundation you need before doing anything serious in nanofabrication, IC design, or compound-semiconductor research.
→ STARS müfredatı (resmi syllabus)
İlk dosyayı sen atarsan — not, slayt, geçmiş sınav, çözüm, cheat-sheet, ne varsa — defter ekibi öğrenci paylaşımlarından bu dersin notlarını yazar. Drive linki / PDF / ZIP, hepsi olur.
| Dönem | Course CPA | |
|---|---|---|
| 2024-2025 Spring | 3.40 | 1 sec · 24 öğr |
| 2022-2023 Spring | 3.96 | 1 sec · 8 öğr |
| 2020-2021 Spring | 3.77 | 1 sec · 13 öğr |
| 2018-2019 Spring | 3.76 | 1 sec · 13 öğr |
| 2016-2017 Spring | 3.50 | 1 sec · 11 öğr |
| 2015-2016 Spring | 2.49 | 1 sec · 13 öğr |
| 2014-2015 Spring | 3.45 | 1 sec · 11 öğr |
| 2012-2013 Spring | 3.86 | 1 sec · 7 öğr |
| 2011-2012 Spring | 3.66 | 1 sec · 14 öğr |
Aggregate course GPA — Bilkent STARS'tan public data. Hoca-bazlı per-section detayı için STARS evaluation report →. Öğrenci anket cevapları KVKK kapsamında defter'de tutulmaz.
Minimum 75% attendance is required to qualify for the final exam (Tentative).