Semiconductor electronics technology, overview of fabrication methods, physics of semiconductors in equilibrium and non-equilibrium, movement of free carriers in semiconductors, p-n and metal-semiconductor junctions, heterojunctions and quasi-electric fields, basic quantum mechanics for nanoscale semiconductor structures and quantum-effect devices, metal-oxide-semiconductor capacitor and MOS transistors, bipolar junction transistors, field effect transistors and nanowire FETs, high electron mobility transistors, resonant tunneling in semiconductor nanostructures, transistor scaling issues, ballistic transport and ballistic transistors, graphene transistors.
İlk dosyayı sen ekleyebilirsin — notlar, geçmiş finaller, çözümler, cheat-sheet, ne varsa. Drive linki / PDF / ZIP / fotoğraf, hepsi olur.
Şu an: mail at, ben düzenleyip yayına alayım. Form/upload UX yakında geliyor (Kimya tasarlıyor).
| Dönem | Course CPA | |
|---|---|---|
| 2024-2025 Spring | 3.40 | 1 sec · 24 öğr |
| 2022-2023 Spring | 3.96 | 1 sec · 8 öğr |
| 2020-2021 Spring | 3.77 | 1 sec · 13 öğr |
| 2018-2019 Spring | 3.76 | 1 sec · 13 öğr |
| 2016-2017 Spring | 3.50 | 1 sec · 11 öğr |
| 2015-2016 Spring | 2.49 | 1 sec · 13 öğr |
| 2014-2015 Spring | 3.45 | 1 sec · 11 öğr |
| 2012-2013 Spring | 3.86 | 1 sec · 7 öğr |
| 2011-2012 Spring | 3.66 | 1 sec · 14 öğr |
Aggregate course GPA — Bilkent STARS'tan public data. Hoca-bazlı per-section detayı için STARS evaluation report →. Öğrenci anket cevapları KVKK kapsamında defter'de tutulmaz.
Minimum 75% attendance is required to qualify for the final exam (Tentative).
State-of-art semiconductor electronics technology and overview of fabrication methods Physics of semiconductors in equilibrium Movement of free carriers in semiconductors, Physics of semiconductors in non-equilibrium PN Junctions PN Junctions, cont. Metal-semiconductor junctions Heterojunctions and quasi-electric fields Basic quantum mechanics for nanoscale semiconductor structures, quantum-effect devices, resonant tunneling in semiconductor nanostructures Metal-oxide-semiconductor capacitor and MOS transistors. Bipolar junction transistors Field effect transistors, nanowire FETs, and high electron mobility transistors Transistor scaling issues, ballistic transport, ballistic transistors and Graphene transistors Photonic Devices ECTS - Workload Table: Activities Number Hours Workload Preparation for Quiz 10 4 40 Quiz 10 1 10 Course hours 14 3 42 Final exam 1 3 3 Preparation for Midterm exam 2 15 30 Midterm exam 2 2 4 Preparation for Final exam 1 25 25 Total Workload: 154 Total Workload / 30: 154 / 30 5.13 ECTS Credits of the Course: 5 Type of Course: Lecture Teaching Methods: Assignment - Exercises - Independent study - Lecture - Presentations