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EEE 313

Electronic Circuit Design

Diode circuits. Transistors and biasing. Basic transistor amplifiers. Frequency response. Transistor current sources. Differential amplifiers. Multistage amplifiers. Digital circuits and logic gates.

Credit4
ECTS6.5
BölümElectrical and Electronics Engineering
FacultyFaculty of Engineering
PrereqEEE 202 and EEE 211
MüfredatY3 Güz

Hocalar 1 bu dönem · 8 geçmiş

Bu dönem (2025-2026 Spring) · 2 section
Abdullah Atalar ×2
Geçmişte ders veren (8 kişi)
Erdinç Tatar, Satılmış Topcu, Yusuf Ziya İder, Aykutlu Dana, Fatih Ömer İlday, Ali Kemal Okyay, Tarık Reyhan, Orhan Aytür

→ STARS müfredatı / syllabus

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↑ konuya EEE 313 yaz

Geçmiş GPA dağılımı 37 dönem · ort. 2.20

DönemCourse CPA
2025-2026 Fall 2.27 2 sec · 113 öğr
2024-2025 Fall 2.72 2 sec · 95 öğr
2024-2025 Spring 2.48 2 sec · 84 öğr
2023-2024 Fall 2.20 3 sec · 126 öğr
2023-2024 Spring 2.38 2 sec · 94 öğr
2022-2023 Fall 2.10 3 sec · 134 öğr
2022-2023 Spring 1.54 2 sec · 63 öğr
2021-2022 Fall 1.70 6 sec · 153 öğr
2021-2022 Spring 1.91 3 sec · 93 öğr
2020-2021 Fall 2.04 3 sec · 89 öğr

Aggregate course GPA — Bilkent STARS'tan public data. Hoca-bazlı per-section detayı için STARS evaluation report →. Öğrenci anket cevapları KVKK kapsamında defter'de tutulmaz.

Müfredat detayı STARS syllabus

📚 Önerilen kaynaklar

  • Zorunlu Fundamentals of Microelectronics Behzad Razavi · 2014 · Wiley
  • Önerilen Microelectronics Circuit Analysis and Design Donald A. Neamen · Fourth Edition · 2010

⚖️ Değerlendirme

  • 35% — Final:Essay/written: Final (×1)
  • 25% — Midterm:Essay/written: Midterm (×1)
  • 12% — Lab work: Lab assignments (×1)
  • 10% — Project: Project (×1)
  • 12% — Quiz: 4 quizzes (×1)
  • 2% — Homework: HW Assignments (×1)
  • 4% — In-class attendance: Attendance (×1)

⚠️ FZ engelleyen şartlar

No condition for the final exam eligibility.

📅 Haftalık müfredat

Semiconductor Physics, P-N diode Physics Fundamentals of diode operation Bipolar Junction Transistor (BJT) operation basics and DC analysis Small signal analysis and BJT amplifiers BJT amplifiers Metal oxide semiconductor (MOS) device basics MOSFET device biasing, DC analysis, and amplifiers MOSFET amplifiers Current mirrors BJT differential amplifiers MOSFET differential amplifiers Frequency response of the BJT amplifiers Frequency response of MOSFET amplifiers Output stages and power amplifiers ECTS - Workload Table: Activities Number Hours Workload Midterm exam 2 2 4 Preparation for Quiz 5 3 15 Final exam 1 3 3 Preparation for Final exam 1 25 25 Course hours 14 3 42 Preparation for Midterm exam 2 20 40 Laboratory (including preparation) 9 4 36 Quiz 5 1 5 Project (including preparation and presentation if applicable) 1 20 20 Total Workload: 190 Total Workload / 30: 190 / 30 6.33 ECTS Credits of the Course: 6,5 Type of Course: Laboratory Work - Lecture - Project Teaching Methods: Lecture - Practical session - Exercises - Independent study